Abstract
The growth mechanism of Cu/Si(001)2 × 1 has been studied by means of scanning RHEED (reflection high energy electron diffraction) microscopy and scanning Auger electron spectroscopy. We obtained the following experimental results: (1) At room temperature, an intermixing layer of Cu with the Si surface is formed and no defined interface structure is observed. (2) At high temperatures ( T ∼ 500 °C), anisotropic growth of islands is observed on Si(001)2 × 1 and the long axis of the islands corresponds to the direction normal to the dimmer row. The distribution of the anisotropic islands is closely correlated with the domain structure of 2 × 1 and 1 × 2. (3) The islands are composed of Cu-silicide and the interface regions between the islands and the substrate are rich in Si. (4) The small reduction of the Si Auger signal with increasing Cu coverage (0–100 ML) upon deposition at 500 ° C is explained by three-dimensional nucleation of islands with a low density of on the Si clean surface 1 × 1 structure. Island formation occurs in a modified mode of Volmer-Weber growth. Lastly, the nucleation mechanism of the Cu-silicide islands is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
