Abstract
(AlAs) n /(AlP) n ( n=1–5) short-period superlattices were grown by gas-source migration-enhanced epitaxy at a low growth temperature. High-quality short-period superlattices of AlAs/AlP were confirmed by X-ray diffraction, cross-sectional transmission electron microscopy analysis, and Raman spectroscopy. The satellite peaks related to the superlattice were clearly observed in the X-ray diffraction patterns and the average heterointerface roughness of the (AlAs) 2/(AlP) 2 superlattice was estimated to be 0.42 Å. Dynamical-theory simulations of X-ray diffraction patterns showed good agreement with the experimental patterns. Layer-by-layer growth with small interface roughness was confirmed by cross-sectional transmission electron microscopy analysis. In the Raman scattering spectra, confined modes of LO phonons of AlP, caused by strained AlAs/AlP superlattices, were observed.
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