Abstract
We investigate the epitaxial growth of (Al,Ga)2O3 alloy thin films in the corundum phase on r-plane (01.2) Al2O3 substrates. We compare films grown by pulsed laser deposition at substrate temperatures of 750 °C and 1000 °C. The initial strongly anisotropic plastic strain relaxation through the a-plane prismatic glide system is directly evidenced by imaging the associated slip lines. We find enhanced plastic relaxation at the higher substrate temperature. Details of the stoichiometry transfer from the target to the film are discussed.
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