Epitaxial growth and properties of Mg x Zn1-x O films produced by pulsed laser deposition

Abstract

The Mg x Zn1-x O thin films with a Mg content corresponding to x = 0–0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal Al2O3 (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and Mg0.35Zn0.65O films does not exceed 1%, whereas the band gaps of the films differ by 0.78 eV. The surface roughness of the films corresponds to 0.8–1.5 nm in the range of x = 0–0.27.