Abstract
We have prepared and investigated the structural, compositional, morphological, and photochemical properties of N-doped TiO2(110), -(100), and -(001) epitaxial films grown by means of plasma-assisted molecular beam epitaxy. The N solid solubility is limited to ∼1−2 atom % of the total anions in the lattice in films where excellent long-range structural order is maintained throughout growth. The photochemical activity of the resulting surfaces was evaluated by using hole-mediated decomposition of adsorbed trimethyl acetate. Undoped surfaces of the three orientations exhibited comparable photochemical activities. However, the dependence of the photochemical activity on N concentration shows a marked crystallographic dependence. The results are rationalized in terms of the apparent crystallographic anisotropy of hole mobility as well as hole trapping and detrapping probabilities.
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