Abstract
Zinc telluride (ZnTe) has attracted interests for its semiconducting, optoelectronic, and electrical switching properties. However, the growth mechanism of ultrathin epitaxial films is not well established. Here we present a systematic study of the growth ultrathin ZnTe films on GaAs (001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction and synchrotron based high-resolution X-ray diffraction showed that both surface atomic ordering and single crystalline phase aligned to the substrate orientation with small variation of c-axis lattice in the ultrathin films. While the deviation of chemical compositions depended on the growth conditions, information on the variation of the band gap and in-gap states was obtained through spectroscopic ellipsometry analysis. Our study showed that single crystal ZnTe films can serve as a model system in the development of Ovonic threshold switching devices for cross-point device applications.
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