Abstract
Summary form only given. MnAs is an attractive material for semiconductor spintronic devices, since MnAs is a ferromagnetic metal at room temperature and can be epitaxially grown on Si and GaAs substrates. We demonstrate the growth of MnAs/AlAs/MnAs MTJs having flat interface morphology, by the use of a several-monolayer(ML)-thick ultrathin GaAs buffer layer grown on an exact [111]B GaAs substrate. The magnetization (M-H) loop of this MTJ is also presented.
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