Abstract
The epitaxial growth of ZnTe in a ZnTe- I 2 system by a closed tube method is investigated by varying the charged iodine concentration ( M I 2) or the temperature difference ( ΔT) between the high and low temperature zones. The transport rate is a function of M I 2 and ΔT and has a minimum value increasing monotonically at higher and lower iodine concentration, and it increases with increasing ΔT. This experimental result can be explained well by thermodynamical calculations. The growth rate of ZnTe has the same tendency as the transport rate. The surface morphology of epitaxial layer on (110)ZnTe is not sinificantly affected by M I 2 but becomes smoother with increasing temperature. The surface morphology and the growth rate of ZnTe layers also depend upon the orientation of substrate. The epitaxial layer can be obtained at temperature as low as 623°C.
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