Abstract
We report on the growth, structural and transport properties of zinc-blende CrAs/GaAs/MnAs/GaAs multilayers on GaAs(001) substrates. Structural analyses using in-situ reflection high-energy electron diffraction and exsitu cross-sectional transmission electron microscopy confirmed the realization of a zinc-blende crystal structure. Room temperature Hall measurements reveal that the as-grown multilayer exhibits p-type conductivity with a very low resistivity of <TEX>$0.052\;\omega{cm}$</TEX>, a high carrier concentration of <TEX>$6.2X10^{19}\;cm^{-3}$</TEX> and a Hall mobility of <TEX>$1.8\;cm^2/Vs$</TEX>. We also observed a clear decrease of the resistivity in samples after low temperature annealing.
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