Abstract
High quality epitaxial indium oxide (In2O3) films were prepared on the a-plane sapphire [Al2O3 (110)] substrates at 570–690 °C by the metal-organic chemical vapor deposition (MOCVD) technique. The properties of structure, morphology and photoelectricity for the obtained films were studied at length. The film deposited at 650 °C showed the best crystalline quality with an out-of-plane epitaxial relationship of In2O3 (111)∥Al2O3 (110). This film also had the highest Hall mobility of 42 cm2V−1s−1 with a lowest resistivity of 5 × 10−3 Ω cm and a lowest carrier concentration of 3 × 1019 cm−3. All the samples possessed high average transparencies (over 83%) in the visible region and wide optical band gaps (∼3.70 eV). The In2O3 films with high crystalline quality as well as satisfactory photoelectrical characteristics can be extensively used in the manufacture of various semiconductor devices.
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