Epitaxial Grown Ferroelectric Polymers on Graphene Layer for Non-Volatile Transistor Memory with Graphene Channel

Abstract

Controlling the crystal orientation is important to ferroelectric polymers to enhance ferroelectric properties. Here, we demonstrated non-volatile ferroelectric polymer memory with exfoliated monolayer graphene and epitaxial grown ferroelectric polymer. The mechanically exfoliated and transferred graphene was used as channel and epitaxial substrate for poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE). The epitaxial interaction between graphene and ferroelectric polymer results aligned chain-axis of polymer along the graphene’s 3-fold symmetry and provide improved remnant polarization and coercive field. Furthermore, the epitaxial grown ferroelectric polymer and monolayer graphene with Cr/Au source and drain electrode and few layer graphene for gate electrode demonstrated non-volatile graphene transistor memory with retention and endurance cycles more than 10,000 sec and 1,000 times, respectively.