Abstract
The current process of growing graphene by thermal decomposition of 3C-SiC(100) on silicon is technologically attractive. Here, we study epitaxial graphene on single domain 3C-SiC films on off-axis Si(100). The structural and electronic properties of such graphene layers are explored by atomic force microscopy, x-ray photoelectron spectroscopy, and Raman spectroscopy. Using low energy electron diffraction, we show that graphene exhibits single planar domains. Near-edge x-ray absorption fine structure is used to characterize the sample, which confirms that the graphene layers present sp2 hybridization and are homogeneously parallel to the substrate surface.
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