Abstract
By forming an ultrathin (∼100 nm) SiC film on Si substrates and by annealing it at ∼1500 K in vacuo, few-layer graphene is formed on Si substrates. Graphene grows on three major low-index surfaces: (1 1 1), (1 0 0) and (1 1 0), allowing us to tune its electronic properties by controlling the crystallographic orientation of the substrate. This graphene on silicon (GOS) technology thus paves the way to industrialization of this new material with inherent excellence. With its feasibility in Si technology, GOS is one of the most promising candidates as a material for Beyond CMOS technology.
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