Abstract
In this letter, we report the first wafer-scale epitaxial graphene field-effect transistor (FET) grown and fabricated on 2-inch sapphire (0001) substrate by chemical vapor deposition (CVD) without a metal catalyst. The monolayer structure of the epitaxial graphene was confirmed by Raman spectra. Room temperature Hall effect mobility was 1,500 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V·s. The maximum drain source current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> ) of 0.78 A/mm and peak transconductance of 0.13 S/mm were obtained at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> = -1 V for the graphene FET with gate length of 100 nm. The cutoff frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> ) and maximum oscillation frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> ) reached 24 GHz and 26 GHz after de-embedding, respectively, which are the first epitaxial graphene-on-sapphire FET showing RF performance. Our work proves out the promise of epitaxial graphene on sapphire substrate.
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