Abstract
We are developing high efficiency multicolor solar cells for terrestrial applications using a novel MOCVD growth technique, vacuum MOCVD, for growing the sequential epitaxial layers. We believe the vacuum MOCVD growth technology offers several advantages for production scale-up including the more efficient use of the metal alkyl source materials. In addition, the use of stainless steel rather than glass offers important safety advantages. For two color cell applications, we are currently developing the GaAs 1− x P x and GaAs 1− y Sb y ternary alloys. In this paper, we first describe our vacuum MOCVD system and then the current status of our vacuum MOCVD grown GaAs 1− y Sb y materials. Triethyl-Sb and trimethyl-Sb are compared as sources of Sb, and dicyclopentadienyl-Mg and diethyl-Zn are compared as p-type dopant sources
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