Abstract
∼ 1 micron thick Cu2−xMnxO films were grown both on Au-coated and uncoated (001) Si from sulphate solutions at 60°C, several hundred degrees lower than normally used for growth of dilute magnetic semiconductors. The Mn concentration in the films was controlled very sensitively by controlling both the ratio of Mn:Cu in solution and the deposition potential. An optimum Mn concentration of 0.3% in the films produced saturation magnetization values of 0.6μB∕Mn at room temperature. The Cu2−xMnxO films were semiconducting with resistivitity value lower than the undoped film. Photoluminscence measurements showed that Mn substitutes on the Cu lattice sites.
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