Abstract
The evolution of ultra-thin Er deposits on Si(111) upon annealing is studied by low-energy electron diffraction (LEED), high-resolution angle-resolved photoemission (ARUPS), and Auger electron diffraction techniques. The data show that one monolayer Er deposited at room temperature results in a disordered surface phase. However, subsequent annealing at 400°C converts this phase in an epitaxial two-dimensional silicide with a remarkable degree of order. This surface silicide can be readily distinguished from its three-dimensional counterpart. LEED shows a p(1 x 1) as opposed to the 3 × 3 R30° observed on thick epitaxial ErSi 1.7 layers and Er MNN Auger intensity polar profiles indicate that the Er is accomodated below a buckled Si(111) layer similar to the ideal Si(111) termination. ARUPS reveals two-dimensional band states which confirm the high structural quality of this compound and shows that it is a unique example of a two-dimensional semi-metal.
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