Abstract
Cubic silicon carbide (3C‐SiC) material feature a suitable bandgap and high resistance to photocorrosion. Thus, it has been emerged as a promising semiconductor for hydrogen evolution. Here, the relationship between the photoelectrochemical properties and the microstructures of different SiC materials is demonstrated. For visible‐light‐derived water splitting to hydrogen production, nanocrystalline, microcrystalline and epitaxial (001) 3C‐SiC films are applied as the photocathodes. The epitaxial 3C‐SiC film presents the highest photoelectrochemical activity for hydrogen evolution, because of its perfect (001) orientation, high phase purity, low resistance, and negative conduction band energy level. This finding offers a strategy to design SiC‐based photocathodes with superior photoelectrochemical performances.
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