Abstract
By using an amorphous overlayer of arsenic, it is shown that a GaAs(100) wafer, with a layer of GaAs grown on it by molecular-beam epitaxy, can be satisfactorily transferred in the laboratory atmosphere from one ultrahigh vacuum chamber to another. The clean GaAs(100) surface is retrieved in the second chamber by low-temperature (350 °C) evaporation of the arsenic overlayer. An epitaxial layer of CaF2 was grown successfully on a smooth GaAs surface retrieved in this manner. This technique offers an opportunity to investigate GaAs/epifluoride/GaAs structures by transferring samples between the GaAs growth chamber and the fluoride growth chamber without subjecting them to a higher temperature (600 °C) cleaning process.
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