Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

Abstract

High critical current-density (10to420kA∕cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10−3–10−1mbar. We find a much better reproducibility and control compared to previous work. From the current-voltage characteristics and cross-sectional transmission electron microscopy images it is inferred that, compared to the commonly used AlOx barriers, the polycrystalline AlN barriers are much more uniform in transmissivity, leading to a better quality at high critical current densities.