Abstract
Epitaxially-grown distributed Bragg reflectors (DBR's) employing thermally oxidized AlAs as the low refractive index constituent and (Al,Ga)InP as the high index constituent are fabricated. The 4.5-pair Ga/sub 0.5/In/sub 0.5/ P-oxide and Al/sub 0.5/In/sub 0.5/ P-oxide DBR's exhibit high reflectivity (>90%) over a range of 635-967 nm and 470-676 nm, respectively. The (Al,Ga)InP-oxide DBR's are shown to require less material to produce high reflectivity and to have significantly wider bandwidth than all-semiconductor DBR's used in the visible spectrum. >
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