Abstract
Ferroelectric PMN–PT thin films with a thickness of 600 nm were epitaxially grown on buffered Si (0 0 1) substrates at a substrate temperature that ranged from 550 to 700 °C using pulsed laser deposition (PLD). LaNiO 3 (LNO) electrode thin films with a resistivity of ∼1900 μΩ cm were epitaxially grown on CeO 2/YSZ buffered Si (0 0 1) substrates. The PMN–PT thin films grown at 600 °C on LNO/CeO 2/YSZ/Si substrates had a pure perovskite and epitaxial structure. The PMN–PT films exhibited a high dielectric constant of about 1818 and a low dissipation factor of 0.04 at a frequency of 10 kHz. Polarization-electric-field (P-E) hysteresis characteristics, with a remnant polarization of 11.1 μC/cm 2 and a coercive field of 43 kV/cm, were obtained in the epitaxial PMN–PT films.
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