Enzymatic Ring Opening Polymerization Of É›-caprolactone By Using A Novel Immobilized Biocatalyst

Abstract

Physical asymmetrical Metal / AZO / SiOx / n-Si / Metal devices in semiconductor-insulator-semiconductor (A-SIS) framework were investigated for their anormaly current-voltage characteristics under light irradiation. The devices showed a normal rectifying character in dark but manifested a peculiar current-voltage feature at reverse bias under illumination. Considering the change of energy band structure at the reverse electric field, it was found that the transport of electrons was mainly dominated by the thermionic emission and quantum tunneling at low voltage. With the increase of the reverse bias, the electrons were able to tunnel through the reduced barrier of ultra-thin SiOx layer (<1nm) and an effective triangle-like barrier of silicon. An appropriate simulation of the J-V relationship demonstrated that the photons acting as the assisted part magnified the reverse current density, and the thickness of SiOx layer managed the amount of the reverse saturation current. Copyright © 2016 VBRI Press. amplification of the reverse current with the increase of the negative bias from -1.0 to - 4.0 V, especially, the reverse current is maintained at a saturation value in the range of about - 3.5 to - 4.0 V. The unusual optoelectronic property has been observed with the reduced thickness of SiOx buffer layer in the scope of 0.5-1.0 nm within AZO/SiOx/Si heterojunction structure, rather than PV characteristics for the metal/AZO/SiOx/Si/metal device. What is the mechanism by which results in the change of physical