Ensemble Monte Carlo Simulation of a Pseudomorpihc HEMT Structure

Abstract

The paper presents an analysis of a pseudomorphic HEMT structure through an ensemble Monte Carlo simulation. The effect of velocity overshoot and real-space transfer on the device performance is investigated. The electron drift velocity drops due to the intervalley transfer in the bulk InGaAs, and real-space transfer into the surrounding lower mobility GaAs and AlGaAs layers. Depending on the gate bias, the velocity near the drain is limited by either k-space or real-space transfer. At low gate bias real-space transfer occurs, while at high gate bias intervalley transfer within the bulk InGaAs limits the carrier speeds.