Abstract
We have demonstrated extraordinary optical pulse generation with a peak-power of 55 W and pulse duration of 15 ps by intense electrical pulse excitation of a 401 nm GaInN laser diode (LD). Electrical pulse excitation of a GaInN LD which contained a thicker electron blocking layer gave rise to abnormal behavior with a several nanosecond-long delay and apparent Q-switching under intense excitation. Operation of this LD under such excitation was found to produce highly intense optical pulses even in semiconductor lasers with a single-transverse-mode.
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