Enlarge the process window of patterns in 22nm node by using mask topography aware OPC and SMO

Yansong Liu Yansong Liu,Xiaojing Su Xiaojing Su,Fengliang Liu Fengliang Liu,Lisong Dong Lisong Dong,Weijie Shi Weijie Shi,Junwei Lu Junwei Lu,Yayi Wei Yayi Wei,Zhiyang Song Zhiyang Song,Lile Lu Lile Lu,Yajuan Su Yajuan Su,Moran Guo Moran Guo,Shengrui Zhang Shengrui Zhang

doi:10.1109/cstic.2015.7153352

Enlarge the process window of patterns in 22nm node by using mask topography aware OPC and SMO

Yansong Liu Yansong Liu, Xiaojing Su Xiaojing Su + Show 10 more

https://doi.org/10.1109/cstic.2015.7153352

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Publication Date: Mar 1, 2015

Affiliation: State Key Laboratory on Integrated Optoelectronics, Chinese Academy of Sciences, Shenzhen Metro (China)

#Opaque MoSi On Glass #Source Mask Optimization + Show 8 more

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Abstract

The mask three dimensional (M3D) effect of thin Opaque MoSi on Glass (OMOG) mask is analyzed by investigating the difference of diffraction orders between rigorous electro-magnetic field (EMF) simulation and thin mask approximation. Then the potential of extending the process window of AttPSM and OMOG masks with 22nm node SRAM cell patterns by using Optical Proximity Correction (OPC) and Source Mask Optimization (SMO) is compared. Both the OMOG and AttPSM masks are simulated and discussed. For this case, the results show that the overlapped process window (PW) greatly reduces without considering the M3D effects in OPC. In addition, M3D aware SMO improves the total process window one step further.

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