Enhancing Transition Dipole Moments of Heterocyclic Semiconductors via Rational Nitrogen-Substitution for Sensitive Near Infrared Detection.

Abstract

Designing ultrastrong near-infrared (NIR) absorbing organic semiconductors is a critical prerequisite for sensitive NIR thin film organic photodetectors (OPDs), especially in the region of beyond 900nm, where the absorption coefficient of commercial single crystalline silicon (c-Si) is below 103 cm-1 . Herein, a pyrrolo[3,2-b]thieno[2,3-d]pyrrole heterocyclic core (named as BPPT) with strong electron-donating property and stretched geometry is developed. Relative to their analogue Y6, BPPT-contained molecules, BPPT-4F and BPPT-4Cl, show substantially upshifted and more delocalized highest occupied molecular orbitals, and larger transition dipole moments, leading to bathochromic and hyperchromic absorption spectra extending beyond 1000nm with very large absorption coefficients (up to 3.7-4.3 × 105 cm-1 ) as thin films. These values are much higher than those (104 to 1 × 105 cm-1 ) of typical organic semiconductors, and 1-2 orders higher than those of commercial inorganic materials, such as c-Si, Ge, and InGaAs. The OPDs based on BPPT-4F or BPPT-4Cl blending polymer PBDB-T show high detectivity of above 1012 Jones in a wide wavelength range of 310-1010nm with excellent peak values of 1.3-2.2 × 1013 Jones, respectively, which are comparable with and even better than those commercial inorganic photodetectors.