Abstract

Subwavelength artificial structures of high refractive index dielectrics provide an effective way to control and manipulate light on a nanoscale by enhancing electric and magnetic fields. This kind of structure usually has low absorption loss, but its performance is also limited by radiation loss, which will reduce the efficiency of its nonlinear response. This problem can be solved by using bound states in the continuum (BICs). The BICs are a kind of unconventional state which is in continuous domain but remains localized. They exist within a light cone and have an infinite quality factor. By combining BICs with nonlinear optics, high-<i>Q</i> resonances from quasi-BICs are used to excite and enhance the nonlinear response. The simulation shows that when the symmetry of the unit cell of the silicon nanoparticle arrays is broken, the BIC become the quasi-BIC, and the transmission spectrum will produce a high-<i>Q</i> narrow resonance valley. The resonance has polarization dependence of electric field. With the change of pump wavelength, the third-harmonic generation (THG) intensity first increases and then decreases gradually. The pump wavelength changed by several nanometers can change THG intensity by at least one order of magnitude. When the pump wavelength is adjusted to the resonance wavelength, the nonlinearity is significantly enhanced as a result of the strong field localization. The THG intensity is highly sensitive to the variation of asymmetric parameters. Only a change of 75 nm will result in a decrease of THG intensity by at least one order of magnitude. There is a third-order relationship between pump power and THG power. For the proposed structure, the factors affecting the conversion efficiency of THG include pump power, pump wavelength, polarization angle of pump light, and asymmetry parameter. When the polarization direction of electric field is along the short axis of the structure and the pump light at resonance wavelength is vertically incident to the structure with an asymmetric parameter of 0.125, the conversion efficiency of THG can be increased to ~2.6 × 10<sup>–6</sup> and the intensity of THG is increased by six orders of magnitude. The results are expected to be applied to designing the silicon-based optical nonlinear devices.

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