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Abstract
The nonlinearity of semiconductor quantum dots under the condition of low light levels has many important applications. In this study, linear absorption, self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity of multiple quantum dots, which are coupled by multiple tunneling, are investigated by using the probability amplitude method. It is found that the linear and nonlinear properties of multiple quantum dots can be modified by the tunneling intensity and energy splitting of the system. Most importantly, it is possible to realize enhanced self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity with low linear absorption by choosing suitable parameters for the multiple quantum dots. These results have many potential applications in nonlinear optics and quantum information devices using semiconductor quantum dots.
Highlights
Nonlinear optical interaction of semiconductor quantum dots (QDs) has been widely studied [1,2,3,4,5,6,7,8,9,10] because it plays a fundamental role in many key devices, such as quantum logic gates [11,12], optical amplifiers [13,14] and single photon source [15]
Via tunneling induced transparency (TIT), giant self-Kerr nonlinearity with vanishing absorption can be realized in triple quantum dots (TQDs) [62]
In MQDs, the tunneling couplings Ti depends on the barrier characteristics and the external electric field, frequency transition ω1i depends on effective confinement potential which can be manipulated by the external electric field
Summary
Nonlinear optical interaction of semiconductor quantum dots (QDs) has been widely studied [1,2,3,4,5,6,7,8,9,10] because it plays a fundamental role in many key devices, such as quantum logic gates [11,12], optical amplifiers [13,14] and single photon source [15]. Via TIT, giant self-Kerr nonlinearity with vanishing absorption can be realized in triple quantum dots (TQDs) [62]. Via TIT,2goiaf n14t self-Kerr nonlinearity with vanishing absorption can be realized in triple quantum dots (TQDs) [62]. Nced self-Kerr nonlinearity, fifth-order nonlinearity and cross-Kerr nonlinearity with low linear absorption. By using the method in References [26,27], the cross-Kerr nonlinearity (cross phase modulation) effect induced by tunneling Ti (Ωp < Ti < Tn (n = i)) on the probe field can be given as: χTi n=2,n=i (13). Corresponds to the real part of the third-order susceptibility χTi between probe field and tunneling Ti
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