Abstract

Bi2Te3-based alloys are widely utilized in Peltier coolers owing to their highest thermoelectric performance at near-room-temperatures. However, their peak dimensionless thermoelectric figure of merit, zT, is limited to a narrow temperature window due to minority carrier excitation emerging upon heating at around 400 K. Here, we show how this issue can be overcome by incorporating a synthetic rickardite mineral, Cu3–xTe2, in p-type (Bi, Sb)2Te3. The significant enhancement of the electronic and thermal properties could be achieved due to small Cu incorporation into the crystal structure of (Bi, Sb)2Te3 and homogeneous precipitation of Cu3–xTe2 at the grain boundaries. This leads to a high average zT value (zTave) of 1.22 between 350 and 500 K for two compositions, Bi0.5Sb1.5Te3 (BST-5) and Bi0.3Sb1.7Te3 (BST-3), with peak zT values of 1.32 at 467 K and 1.30 at 400 K, respectively. These high zT values result in a considerably high maximum device ZT of ca. 1.15 and a theoretical efficiency of up to 7% between 325 and 525 K. Additionally, room-temperature micro-hardness is substantially improved, which is desirable for constructing reliable and durable thermoelectric modules.

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