Abstract
This letter investigates thermal rectification (TR) in graphene-carbon nanotube (GN-CNT) junctions formed by SWCNT(12, 12) connected with a single-layer graphene nanosheet (GN-SWCNT(12, 12)). It is found that the TR ratio of GN-SWCNT junction can be enhanced dramatically by tuning the chirality of the pillar. TR ratio of the GN-SWCNT(12, 12) junction can respectively reach up to 1487% and 2586.4% at temperatures of 300 K and 200 K , much higher than those previously reported for the pillared graphene and GN-CNT junctions. The influences of the geometric parameters on the thermal rectification are discussed. The results could offer useful guidelines to the design and performance improvement of the GN-CNT–based thermal rectifier.
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