Abstract
Abstract A detail investigation on enhancing the performance of heterogeneously coupled Stranski–Krastanov (SK) on Submonolayer (SML) quantum dot (QD) heterostructure has been done in this study. Different approaches have been implemented on the heterostructures to extend the emission wavelength towards telecommunication window. Strain reducing capping layers such as InxGa1-xAs, InxAlyGa1-x-yAs and GaAs1-xSbx has been considered for optimizing the discussed SK on SML QD heterostructures. Impact of different configurations on the hydrostatic and biaxial strain profile as well as carrier localization has been examined. Furthermore, by implementing these configurations, the photoluminescence wavelength was extended from the previously reported wavelength (1.1 μm) towards the telecommunication window (1.3 μm), which would impact the growth and fabrication of different optoelectronic devices in the near future.
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