Abstract
Li1.3Al0.3Ti1.7(PO4)3 (LATP) has become the focus of research because of its high ionic conductivity, high oxidation voltage, and low air sensitivity. However, Ti4+ is easily reduced by Li metal. In this paper, amorphous Li1.5Al0.5Ge1.5(PO4)3 (a-LAGP) is introduced as an interface modification layer, because LAGP has the small electrochemical potential difference and Ge4+ is more difficult to be reduced by Li. Radio frequency sputtering (RF sputtering) is adopted to modify the a-LAGP thickness less than 100 nm. Compared with crystalline LAGP layer, a-LAGP has a better effect on improving the interface stability of LATP and Li. With the a-LAGP film, the Li/a-LAGP/LATP/a-LAGP/Li symmetrical cell is still stable after 100 cycles with the over potential changing from 1 V to 3 V. The probable mechanism of the good stability between a-LAGP and Li are discussed.
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