Abstract
We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.
Highlights
Recent advances in the ultraviolet (UV) responsivity of siliconbased focal plane imaging arrays enable new lighter-weight, lower-power, and less-complex UV instrument concepts for the investigation of planetary atmospheres
We are pursuing two primary advancements to further improve performance in the 100 to 200 nm far-UV range: (1) use thinner wafers to improve the point spread function in light of the shorter absorption depth of far-UV photons into an Si wafer and to enhance photo-charge collection at a moderate bias, and (2) passivate the backside surface of the silicon Ptype intrinsic N-type (PIN) detector wafer with an molecular beam epitaxy (MBE) process by setting up a thin surface potential to improve the collection of UV photon generated holes at the illuminated surface
Encouraging progress has been made toward our primary goal of advancing the far-UV capabilities of backside-illuminated silicon PIN complementary metal oxide semiconductor (CMOS) devices
Summary
Recent advances in the ultraviolet (UV) responsivity of siliconbased focal plane imaging arrays enable new lighter-weight, lower-power, and less-complex UV instrument concepts for the investigation of planetary atmospheres. An initial one-year program was conducted to optimize backside-illuminated silicon Ptype intrinsic N-type (PIN) complementary metal oxide semiconductor (CMOS) devices developed by Teledyne Imaging Systems (TIS) for far-UV planetary science applications. This UV-optimized CMOS detector, built in collaboration with TIS and MIT Lincoln Laboratory (LL), will enable more compact, low-power, low-mass, and larger-format UV focal plane array systems suitable for Discovery missions to the outer planets and their satellites, Mercury, Venus, Mars, and comets
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