Abstract
This paper presents a novel method for enhancing the electroluminescence (EL) efficiency of ten-period silicon-rich oxide (SRO)/SiO2 superlattice-based light-emitting diodes (LEDs). A hydrogen ion beam (HIB) was used to irradiate each SRO layer of the superlattices to increase the interfacial roughness on the nanoscale and the density of the Si nanocrystals (Si NCs). Fowler-Nordheim (F-N) tunneling was the major mechanism for injecting the carriers into the Si NCs. The barrier height of the F-N tunneling was lowered by forming a nano-roughened interface and the nonradiative Pb centers were passivated through the HIB treatment. Additionally, the reflectance of the LEDs was lowered because of the nano-roughened interface. These factors considerably increased the slope efficiency of EL and the maximum output power of the LEDs. The lighting efficiency increased by an order of magnitude, and the turn-on voltage decreased considerably. This study established an efficient approach for obtaining bright Si NC/SiO2 superlattice-based LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
