Abstract
The interface of perovskite solar cells (PSCs) determines their power conversion efficiency (PCE). Here, the buried bottom surface of a perovskite film is efficiently passivated by using MoS2 quantum dots. The perovskite films prepared on top of MoS2-assisted substrates show enhanced crystallinity, as evidenced by improved photoluminescence and a prolonged emission lifetime. MoS2 quantum dots with a large bandgap of 2.68 eV not only facilitate hole collection but also prevent the photogenerated electrons from flowing to the hole transport layer. Overall promotion leads to decreased trap density and an enhanced built-in electric field, thus increasing the device PCE from 17.87% to 19.95%.
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