Abstract
A patterned structure of monolithic hexagonal boron nitride (hBN) on a glass substrate, which can enhance the emission of the embedded single photon emitters (SPEs), is useful for onchip single-photon sources of high-quality. Here, we design and demonstrate a monolithic hBN metasurface with quasi-bound states in the continuum mode at emission wavelength with ultrahigh Q values to enhance fluorescence emission of SPEs in hBN. Because of ultrahigh electric field enhancement inside the proposed hBN metasurface, an ultrahigh Purcell factor (3.3 × 104) is achieved. In addition, the Purcell factor can also be strongly enhanced in most part of the hBN structure, which makes the hBN metasurface suitable for e.g. monolithic quantum photonics.
Highlights
Hexagonal boron nitride has attracted much attention as an emerging material, offering novel properties for electro-optical, optical and quantum photonic applications [1,2,3]
By coupling hexagonal boron nitride (hBN) SPEs to plasmonic gold nanospheres, a high fluorescence enhancement of over 300% was achieved in experiments due to high electric field concentrations and small mode volumes [5]
photonic crystal cavities (PCCs) of high Q can be realized from the monolithic hBN layers, the Purcell enhancement was not as high as expected and one should precisely position the SPEs to electric field intensity hotspots of cavity modes
Summary
Hexagonal boron nitride (hBN) has attracted much attention as an emerging material, offering novel properties for electro-optical, optical and quantum photonic applications [1,2,3]. PCCs of high Q can be realized from the monolithic hBN layers, the Purcell enhancement was not as high as expected and one should precisely position the SPEs to electric field intensity hotspots of cavity modes. Kolodny et al reported that the enhancement of the Purcell factor in pillar microcavities can be realized by employing quasi-BIC modes [16]. This method requires top and bottom Bragg mirrors and the other material, and is more complex to fabricate and the SPEs should be precisely put into the location of maximal electric field intensity. The Purcell factor can be strongly enhanced in most parts of the patterned hBN structure, which can ease experimentally the precise positioning of the SPEs in the patterned hBN structure
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