Enhancing Roentgen Sensitivity of Gold-Doped CdIn2S4 Thiospinel for X-Ray Detection Applications

Solmaz N Mustafaeva,Mirsalim M Asadov,Djahan T Guseinov

doi:10.1155/2015/956013

Abstract

The single crystals CdIn2S4Au were grown from preliminarily synthesized polycrystals by the method of chemical transport reactions in a closed volume with iodine used as a carrier. The influence of doping CdIn2S4 single crystals by gold (3 mol %) on their X-ray dosimetric parameters is studied. It is found that the X-ray sensitivity coefficients of CdIn2S4Au crystals increase 6–8 times compared with undoped CdIn2S4 at effective radiation hardness Va= 25–50 keV and dose rate E=0.75–78.05 R/min. Moreover, the persistence of the crystal characteristics completely disappears and the supple voltage of a CdIn2S4Au roentgen detector decreases threefold. The dependence of the steady X-ray-induced current in CdIn2S4Au on the X-ray dose is described by linear law. The studied crystals have a rather high room-temperature X-ray sensitivity (K=2·10-9–1.5·10-8 (A·min)/(R·V)) and are attractive as materials for X-ray detectors.

Highlights

Single crystals of the CdIn2S4 compound belong to the class of wide-band-gap semiconductors [1] with a high specific resistance on the level of ρ∼ 107 Ohm⋅cm
It was shown that the Xray sensitivity coefficient of CdIn2S4 is sufficiently high and ranged from 2.4⋅10−10 to 2.4⋅10−9 (A⋅min)/(R⋅V) at effective radiation hardness Va = 25–50 keV and dose rate E = 0.75–78.05 R/min
The gold-doped (3 mol%) CdIn2S4⟨Au⟩ compound was prepared by high-temperature synthesis

Summary

Introduction

Single crystals of the CdIn2S4 compound belong to the class of wide-band-gap semiconductors [1] with a high specific resistance on the level of ρ∼ 107 Ohm⋅cm. The rather large values of the effective atomic number and the energy gap make CdIn2S4 a suitable material for the fabrication of X-ray detectors, which do not require being cooled. In our previous work [10], we reported the X-ray dosimetric properties of CdIn2S4 single crystals. It was shown that the Xray sensitivity coefficient of CdIn2S4 is sufficiently high and ranged from 2.4⋅10−10 to 2.4⋅10−9 (A⋅min)/(R⋅V) at effective radiation hardness Va = 25–50 keV and dose rate E = 0.75–78.05 R/min. We reported the X-ray dosimetric properties of CdIn2S4 single crystals doped with Cu [11] and Fe [12]. It was shown that the doping of CdIn2S4 single crystals with copper and iron substantially increases their coefficients of Xray conductivity (Kσ) and completely removes the inertia of X-ray-ampere characteristics

Objectives

Results

Conclusion