Enhancing radiation-resistance of amorphous indium–zinc-oxide thin-film transistors by group IV transition element doping

Youngseok Kim, Choongik Kim + Show 1 more

https://doi.org/10.1039/d3tc01874a

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Journal: Journal of Materials Chemistry C	Publication Date: Jan 1, 2023
Citations: 5

Abstract

InZnO TFTs doped with group IV transition elements showed enhanced radiation-resistance compared to undoped InZnO TFTs.

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