Abstract
In this paper, we demonstrate that the performance of the industrial multicrystalline silicon solar cells can be improved by embedding the silver nanoparticles (Ag-NPs) into the SiNx layer. On the one hand, the cells have a certain optical loss in short wavelengths near the plasmonic resonance frequency of Ag-NPs, but their open circuit voltages and filling factors are increased due to depressed surface recombination as those short wavelength photons are mainly absorbed by Ag-NPs instead of the surface; on the other hand, the cells show strong absorption in long wavelengths, which can be attributed to the forward-scattering effect of Ag-NPs. Taking together, UV-absorbing Ag-NPs may act as a “sunscreen” to shield the UV damage, while improve the cell efficiency from 18.05 % to 18.25 % by embedding proper Ag-NPs. The techniques presented in this work can be easily incorporated into the current mc-Si solar cell production line, thus have great potential for the mass practical application.
Highlights
156.75 mm × 156.75 mm × 0.180 mm) were first subject to damage removal etching in KOH at 85○C, immersed in the
Yu et al reported the enhanced localized surface plasmonic resonance (LSPR) forward-scattering effect of 100nm Ag-NPs deposited on Si3N4 layer of 2cm-size samples cut from the industry multicrystalline silicon solar cell
After all textured wafers were applied a phosphorus diffusion to form p-n+ emitter, the Ag-NPs embedded SiNx-ARCs were fabricated as following steps:1 the first SiNx spacer layer with a thickness t1 = 25 nm was deposited on the wafers via plasma-enhanced-chemical-vapor deposition (PECVD);2 Ag-NPs films was deposited on the initial SiNx spacer layer by vacuum thermal evaporation method with a rate of 0.15 Å/s in 0, 40, 80 and 160 seconds, respectively;3 the second SiNx layers with a thickness t2 = 60nm were coated via PECVD
Summary
156.75 mm × 156.75 mm × 0.180 mm) were first subject to damage removal etching in KOH at 85○C, immersed in the. Yu et al reported the enhanced LSPR forward-scattering effect of 100nm Ag-NPs deposited on Si3N4 layer of 2cm-size samples cut from the industry multicrystalline silicon (mc-Si) solar cell.15 We believe that it is essential to reduce surface recombination with the Si3N4 layer acted as a spacer to separate the Ag-NPs and Si substrate, but the exposed Ag-NPs are easy to be oxidized and may loss LSP effect.
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