Abstract
In this work, a Zr-doped TiOx layer is introduced into p-i-n planar-structure perovskite solar cells via a simple sol-gel method. The prepared device configuration is ITO/PEDOT:PSS/CH₃NH₃PbIxCl3-x/PC60BM/Zr-TiOx/Al. The performance of the perovskite solar cells was investigated through measurements of the current-voltage characteristics, impedance analysis, and photocurrent decay. A power conversion efficiency of 15.43% was measured under 1 sun condition; this level of efficiency is 27% higher than that of the device with a Zr-free TiOx layer. Additionally, the incorporation of Zr into the TiOx layer improved the carrier extraction as a result of the oxygen vacancy trap passivation. Lastly, the trap passivation of the Zr-TiOx film was confirmed by analyzing the photoluminescence spectrum.
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