Abstract
In this study, we propose and investigate a novel sandwich structure composed of NixO/SiNx/Ga2O3 for the purpose of enhancing the forward current density and reducing the on-resistance in β-Ga2O3 diodes. The fabricated sandwich Ga2O3 diode demonstrates an impressive forward current density exceeding 1 kA/cm2 under a forward bias of 2 V, surpassing previously reported Ga2O3 Schottky diodes. Furthermore, the sandwich diode exhibits a remarkably low differential specific on-resistance (Ron,sp) of 1.1 mΩ·cm2. These findings present a promising avenue for the design of high-current Ga2O3 power electronics.
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