Abstract

AbstractShortwave infrared (SWIR) image sensors have unique functions in many optical applications, leading to widespread attention in developing next‐generation materials and photodetector technologies. Organic photodetectors (OPDs) are highly promising due to their flexibility in molecular design and processability. However, integrating OPDs with silicon readout integrated circuits (ROICs) poses numerous challenges, often resulting in underestimated device performance and limiting technological progress. To address the requirements of integrating top‐illuminated OPD with ROICs and to enhance the external quantum efficiency (EQE), optical microcavities are introduced into the OPDs. The EQE in the SWIR region can be effectively enhanced by properly adjusting the thicknesses of the photoactive layer (PAL) and interlayers. Simulations of the optical field distribution further support the active functions of the microcavity structure. The spatial variation of the microcavities allows the spectral response to shift from 1000 to 1400 nm, and the optimized device achieves an EQE of 25.8% at 1260 nm. Finally, the OPDs are integrated with a silicon‐based test kit, and the results reveal comparable sensing performance, demonstrating the high potential of microcavity resonance for device integration. This design effectively improves the integration of OPDs with traditional ROICs and advances SWIR‐based organic image sensor technology further toward commercialization.

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