Abstract
In this study, the thermal oxidation rate of oxygen ion (O+) implanted 4H–silicon carbide (SiC) was investigated. And the critical breakdown electric field (Ebreakdown) and capacitance–voltage (CV) curve of the grown oxide (SiO2) film were also evaluated. It is found that the thermal SiO2 growth rate on 4H–SiC (0001) face was significantly improved by O+ implantation. Ebreakdown test results showed that the unconsumed amorphous and damaged crystalline layer under the grown SiO2 contained defects leading to an inferior critical breakdown field. Thus, in order to obtain a high-quality SiO2 film, the oxidation process should be designed delicately so that the damaged layer by implantation could be fully consumed.
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