Abstract
This study utilized the finite difference time domain method to investigate the mid infrared surface phonon polaritons and localized surface phonon resonances in undoped and niobium (Nb)-doped SrTiO3 (STO) with planar and holes array structures. Research has shown that Nb-doped STO operates in the Reststrahlen band of 8.06–18.48 µm, providing a wider spectral response than undoped STO (12.58–18.26 µm) and effectively covering the atmospheric window of long wave infrared. This indicates that the increase in virtual permittivity has the least impact on spectral broadening, indicating that the new infrared sensor technology has broad prospects. The optimization of structural parameters, including the period, filling factor, and depth of STO holes array, as well as the response to changes in incident light angle, is crucial for guiding the design of high-performance optoelectronic devices. In addition, this study explored the excitation of four resonant modes within a holes array and analyzed their relationship with array parameters to enhance the design of optoelectronic applications.
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