Abstract
GaN-based light-emitting diodes (LEDs) with graded-thickness quantum wells and barriers (GMQW-LEDs) are fabricated and researched in this letter. The light power and carrier distribution of GMQW-LEDs are compared with those of LEDs with original uniform MQW (OR-LEDs), graded-thickness quantum wells (GQW-LEDs), and graded-thickness quantum barriers (GQB-LEDs) through numerical simulation, respectively. The experimental results show that light power of GMQW-LEDs is enhanced significantly compared with that of OR-LEDs. The simulation results reveal that GMQW-LEDs show light output power enhancements of 25.7%, 14.3%, and 9.2% compared with OR-LEDs, GQW-LEDs, and GQB-LEDs at current density of 100 A/cm2, respectively. This is due to the superior hole distribution in quantum wells, which inhibits the electron leakage and enhances the radiative recombination.
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