Abstract
Effective p-type doping is essential to enhance hole transport and balance electron-hole injection in quantum dot light-emitting diodes (QLEDs). Here, an oligothiophene material is adopted as a p-type dopant in the hole-transport layer, considering its cruciform cross-center structure, precise molecular weight, and high purity. Compared with the dopant-free counterpart, hole transport capability at the optimal doping level exhibits a significant improvement, producing a boosted external quantum efficiency (EQE) and luminance up to 20.8%, 213439cdm-2 , respectively, among the highest reported on the red-light emission. The work indicates the potential applications of oligothiophene material in red light-emitting devices.
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