Abstract
In this work, ferroelectric CaBi2Nb2O9 thin films were grown on Yttria-stabilized zirconia (YSZ)-buffered (100) Si substrate via radio-frequency magnetron sputtering. X-Ray diffraction analysis showed that the CaBi2Nb2O9 films were (200/020) textured, while the commonly-observed (00l) grains which are weakly polarizable have been eliminated. Enhanced dielectric (~533 @ 5kHz) and ferroelectric properties (Pr ~ 13μC/cm2, Ps ~55μC/cm2 @ 1kHz) were achieved in this high Tc piezoelectric material, leading to a significant improvement of the d33 piezoelectric modulus (from ~15–20pm/V to ~30pm/v). The method of strain engineering used in this work can be applied to the integration of other bismuth-layer structured ferroelectrics into Si-based microelectronics.
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