Abstract

Capacitors form an indispensable part of many modern electrical and electronic devices. An ideal capacitor is expected to possess high power and energy density along with enhanced energy recovery characteristics. Anti-ferroelectric materials form a suitable candidate for ceramic-based capacitor applications, owing to their low loss and high energy density. However, these materials show ample room for improvement through physical means. In this regard, the present work deals with mechanical tuning of the energy storage density and recoverable efficiency in known anti-ferroelectric materials. For this study, various configurations of (Pb1−xLax)(Zr0.90Ti0.10)1−x/4O3 (PLZTx) ceramics have been investigated. Both mechanical confinement and temperature applications have been shown to improve the performance characteristics of all selected compositions. This behavior has been explained on the basis of competing ferroelectric and ferroelastic domain rotations. The application of suitable stress/temperature reduces hysteresis losses and delays anti-ferroelectric ↔ ferroelectric phase transformation, which increases the electrical energy storage capacity of these materials. Mechanical confinement was observed to provide an increase in energy storage density and efficiency by approximately 38% and 25%, respectively, for the PLZT4 composition. The highest recoverable energy density of 698 m J cm−3 was achieved under compressive stress of a 100 MPa and 60 kV cm−1 applied electric field.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.