Abstract
The stability and efficiency of tin perovskite solar cells (TPSCs) are often decreasing with high‐density defects occurring at the grain boundaries of the perovskite film and the heterojunction interfaces of hole‐transport material (HTM) and poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS). Hence, this study addresses these challenges using nickel (II) meso amino octaethylporphyrin (NiNH2 OEP) as an effective defect‐passivating agent for the device fabricated through a two‐step method with an inverted device architecture. The precursor solution contains NiNH2 OEP porphyrin coating over PEDOT:PSS, where NiNH2 OEP is self‐assembled uniformly at the perovskite grain boundary and interface between perovskite and HTM. NiNH2 OEP is protonated to form nickel (II) ammonium porphyrin ions (NiNH3+ OEP) to retard nonradiative charge recombination and inhibit ion migration that occurred through the high‐density defect states to improve device stability and performance. Consequently, the TPSC device fabricated with NiNH2 OEP unveils a remarkable power conversion efficiency of 9.6%. Moreover, the stability of the device shows a prominent improvement that maintains an initial efficiency of 90% for more than 6,000 h inside the glove box.
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